ST(P,U)7N65M2 دیتاشیت

ST(P,U)7N65M2

مشخصات دیتاشیت

نام دیتاشیت ST(P,U)7N65M2
حجم فایل 897.037 کیلوبایت
نوع فایل pdf
تعداد صفحات 18

مشاهده دیتاشیت ST(P,U)7N65M2

دانلود دیتاشیت

سایر مستندات

STP7N65M2 18 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP7N65M2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 60W
  • Total Gate Charge (Qg@Vgs): 9nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 270pF@100V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.15Ω@2.5A,10V
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
  • Base Part Number: STP7N
  • detail: N-Channel 650V 5A (Tc) 60W (Tc) Through Hole TO-220

محصولات مشابه